APTM100H18FG parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ APTM100H18FG

The pictures are for reference only

Brand:

Microchip

Model:

APTM100H18FG

Description:

MOSFET 4N-CH 1000V 43A SP6

Stock:

19856

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$63.08

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

43A

Drain source voltage (Vdss)

1000V(1kV)

FET Type

4 N channels(H )

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

372nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

10400pF @ 25V

On resistance (maximum) for different Ids and Vgs

210 mΩ @ 21.5A,10V

Power - maximum

780W

Vgs (th) (maximum) for different Ids

5V @ 5mA

packing

bulk

series

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP6

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTM100H18FG（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19856,Price reference "real-time change" China/Hongkong。 APTM100H18FG package/specs, Download APTM100H18FG、Datasheet。